Unfortunately, there is not solar cell design. Some groups have Introduction succeeded in fabricating uniform textures with a submicron scale on mc-Si wafers by reactive ion etching and applied The antireflection coating has become a key feature for to the Si solar cells. One of the promising options is surface texturing by dry etching technique. To date, a wide variety of techniques SWS fabrication Reflectance Anti-reflective coatings have been investigated for texturing multi-crystalline (mc) silicon cells. principle to achieve the necessary low refractive indices is always the same: substrate material is mixed with air on a Keywords Sub-wavelength Structure Solar cell sub-wavelength scale. In publications concerning for single layer anti-reflection (SLAR) coatings and SWS broadband or solar anti-reflective surfaces, the and a 0.8% improvement in efficiency has been seen. Using the measured reflectivity data length structured (SWS) surface with dimensions smaller in PC1D, the solar cell characteristics has been compared than the wavelength of light. low reflectivity below 1% was observed over wavelength An alternative to multilayer ARCs are the sub-wave- from 590 to 680 nm. Silicon nitride SWS surfaces with diameter of diffusion of the multilayer ARCs limit the device perfor- 160–200 nm and a height of 140–150 nm were obtained. Addition- nanoparticle masks and inductively coupled plasma (ICP) ally, thermal mismatch induced lamination and material ion etching. Nanoscale Res Lett (2009) 4:680–683 DOI 10.1007/s1167-7 NA NO EX PRESS Fabrication of Antireflective Sub-Wavelength Structures on Silicon Nitride Using Nano Cluster Mask for Solar Cell Application Kartika Chandra Sahoo Æ Men-Ku Lin Æ Edward-Yi Chang Æ Yi-Yao Lu Æ Chun-Chi Chen Æ Jin-Hua Huang Æ Chun-Wei Chang Received: 7 February 2009 / Accepted: 5 March 2009 / Published online: 22 April 2009 to the authors 2009 Abstract We have developed a simple and scalable Unfortunately, multilayer ARCs are expensive to fabricate approach for fabricating sub-wavelength structures (SWS) owing to the stringent requirement of high vacuum, on silicon nitride by means of self-assembled nickel material selection, and layer thickness control. Sahoo, Kartika Lin, Men-Ku Chang, Edward-Yi Lu, Yi-Yao Chen, Chun-Chi Huang, Jin-Hua Chang, Chun-Wei
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A further analysis of the minority carrier lifetime is needed to investigate into the difference in device performances.Fabrication of Antireflective Sub-Wavelength Structures on Silicon Nitride Using Nano Cluster Mask for Solar Cell Application Fabrication of Antireflective Sub-Wavelength Structures on Silicon Nitride Using Nano Cluster. Some simulations in PC1D have been demonstrated to investigate the reasons of the different device performances between fast growth and slow growth structures.
#Using pc1d software simulator
The optical and electrical properties such as surface reflection, external quantum efficiency (EQE), dark I-V, Suns-Voc, and illuminated I-V under one sun using a solar simulator were measured to compare the performances of the solar cells with different growth rates. The structural properties of the wafers were characterized by X-ray diffraction (XRD) to identify the crystalline quality, and then the as-grown wafers were fabricated into solar cell devices under the same process conditions. The solar cell wafers grown at different growth rates of 14 mum/hour and 55 mum/hour were discussed in this work. The cost for fabricating GaAs-based solar cells can be reduced if the growth rate is increased without degrading the crystalline quality. The growth rate for GaAs-based materials is one of critical factors to determine the cost for the growth of GaAs-based solar cells. A standard fabrication process of the GaAs-based solar cells is as follows: wafer preparation, individual cell isolation by mesa, n- and p-type metallization, rapid thermal annealing (RTA), cap layer etching, and anti-reflection coating (ARC).
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The photon recycling model has been developed and was applied to investigate the loss mechanisms in the state-of-the-art GaAs-based solar cell structures using PC1D software. Photon recycling reduces the effect of radiative recombination and is an approach to obtain the device performance described by detailed balance theory. The main carrier recombination mechanisms in the GaAs-based solar cells are surface recombination, radiative recombination and non-radiative recombination. GaAs-based solar cells have attracted much interest because of their high conversion efficiencies of ~28% under one sun illumination.